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Through Silicon Via (TSV) Metrology
FilmTek™ 2000M TSV Metrology Advantages
- Fully automated metrology platform for fast and reliable critical
dimension, etch depth, and film thickness measurement over a wide
range of TSV sizes and aspect ratios
- CD precision (1σ) < 0.2%
- Etch depth precision (1σ) < 0.005%
- Film thickness range: 10nm - 350μm
- Film thickness precision (1σ) < 0.005%
- Measurement time of 1-2 seconds per point
- Pattern recognition by Cognex
- Lowest total cost of ownership
TSV Depth Measurement of High Aspect Ratio TSV Structures
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Interference between reflected
waves is caused by optical path length difference between
the top and bottom surfaces of the TSV structure |
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The spot size must be small
(same order as via diameter) and the measurement beam must
be nearly collimated to observe interference in the
reflected light |
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Patented FilmTekTM
technology allows a small measurement spot size without the use
of a high power objective |
Comparison of TSV Etch Depth by FilmTek™ 2000M TSV and SEM
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Via Diameter (µm) |
Etch
Depth (µm)
SEM |
Etch Depth (μm)
FilmTekTM 2000M TSV |
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5 |
44.5 |
44.3 |
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10 |
55.5 |
55.5 |
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15 |
62.0 |
61.8 |
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20 |
66.5 |
66.8 |
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Excellent agreement between FilmTekTM
2000M TSV and SEM data |
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Measurement of Critical Dimension (CD), Etch Depth, and Residual
Silicon Thickness for MEMS Structures
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SEM |
FilmTekTM 2000M TSV |
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Si thickness
(µm) |
Etch
Depth (µm) |
CD
(µm) |
Si thickness
(µm) |
Etch
Depth (µm) |
CD
(µm) |
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18.3 |
125 |
89 |
18.96 |
124.46 |
89.30 |
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8.2 |
123 |
88 |
8.57 |
123.93 |
88.46 |
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11.6 |
126 |
89 |
11.59 |
126.58 |
88.72 |
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8.9 |
126 |
87 |
8.75 |
126.79 |
86.57 |
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Excellent agreement between FilmTekTM
2000M TSV and SEM data |
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