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FilmTek 1000 UV and FilmTek™ Integrating Sphere

Reflection Spectrophotometry for Photovoltaic Applications

 

FilmTek™ 1000 UV is an accurate and economical film thickness measurement system that is designed specifically for textured substrates.  Unlike competing ellipsometer designs, no special stage tilting or sample alignment is necessary with the FilmTek™ 1000 UV.  By combining small measurement spot size with a large collection angle, superb signal to noise is obtained for rough and textured substrates without sample alignment.  Furthermore, FilmTek™ software automatically models multiple reflections from textured monocrystalline silicon substrates.  The FilmTek™ 1000 UV is especially well suited for measuring anti-reflective coatings on textured silicon substrates (e.g., silicon nitride films deposited on monocrystalline silicon and polycrystalline silicon substrates).

 

The FilmTek™ Integrating Sphere measures the total integrated reflectance of flat surfaces placed against the sphere's 10.3 mm sample port.  Illumination is provided by an internal tungsten halogen lamp, which is baffled such that incident light on the sample has been reflected from the sphere walls.  The sphere's highly Lambertian interior provides a uniform 180° illumination field.  A manual switch allows the measurement of diffuse reflectance or specular and diffuse reflectance.  The FilmTek™ Integrating Sphere is ideal solution for measuring total integrated reflectance and film thickness for photovoltaic applications.

 

For thin film photovoltaic applications, we recommend the FilmTek™ 2000 and FilmTek™ 3000 systems for characterization of the band gap, layer thicknesses, and rough interfacial layers critical for maximizing photovoltaic device efficiency.

 


FilmTek™ 1000 UV

Fixed Stage

 
FilmTek™ Integrating Sphere

Fixed Stage

 

FilmTek Features

Versatile: FilmTek™ incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of:

 

  - Multiple layer thicknesses
  - Indices of refraction [ n(l ) ]
  - Extinction (absorption) coefficients [ k(l ) ]
Low Cost: The cost of ownership of a FilmTek™ 1000 UV / Integrating Sphere is a small fraction of comparable instruments.
No Special Knowledge Required: FilmTek™ software is designed so that minimal experience in personal computers, thin film optical design, or measurement techniques is required.
Non-contact and non-destructive.

 

Hardware

FilmTek™ 1000 UV / Integrating Sphere includes:

 

UV/VIS/NIR spectrophotometer
UV/VIS/NIR light source
Fiber optic cables
Fixed stage with optics
Computer with multi-core processor running Windows™ XP Operating System

 

FilmTek™ 1000 UV Technical Specifications
Film thickness range:
3nm-150µm
Film thickness accuracy:
±2Å for NIST traceable standard oxide 1000Å to 1µm
Spectral range:
240nm-950nm
Measurement spot size:
1mm
Sample size:
2mm to 300mm standard
Spectral resolution:

0.2nm

Light source:
Regulated deuterium-halogen lamp (2,000 hrs lifetime)
Detector type:
2048 pixel Sony linear CCD array
Reflection static repeatability @ 600nm (1s):
0.01%
Measurement time:

<1 sec per site (e.g., oxide film)

Data acquisition time:
0.2 sec
Computer: Multi-core processor with Windows™ XP Operating System

 

 

FilmTek™ Integrating Sphere Technical Specifications
Film thickness range:
10nm-50µm
Film thickness accuracy:
±2Å for NIST traceable standard oxide 1000Å to 1µm
Spectral range:
380nm-950nm
Measurement spot size:
10.3 mm
Sample size:
15mm to 300mm standard
Spectral resolution:

0.2nm

Light source:
Regulated tungsten-halogen lamp (900 hrs lifetime)
Detector type:
3648 pixel Toshiba linear CCD array
Reflection static repeatability @ 600nm (1s):
0.01%
Measurement time:

<1 sec per site (e.g., oxide film)

Data acquisition time:
0.2 sec
Computer: Multi-core processor with Windows™ XP Operating System

 

 

Film(s) Thickness Measured Parameters Precision (1σ)
Oxide / Si 200-500 Å t 0.5 Å
500-10,000 Å t 0.25 Å
1000 Å t, n 0.25 Å / 0.001
Nitride / Si 200-10,000 Å t 0.25 Å
Photoresist / Si 200-10,000 Å t 0.5 Å
a-Si / Oxide / Si 20-10,000 Å t 0.5 Å

 

 
 

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