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FilmTek™ 2000SE and FilmTek™ 3000SE Spectroscopic Ellipsometer

The FilmTek™ 2000SE is an affordable spectroscopic ellipsometer that measures from the deep UV to NIR (190-1700nm).  Based on a rotating compensator design, the FilmTek™ 2000SE spectroscopic ellipsometer combines spectroscopic ellipsometry with normal incidence reflectometry to make it ideally suited for measuring the thickness and optical constants of very thin films.  The FilmTek™ 3000SE spectroscopic ellipsometer adds transmission measurement capability in addition to spectroscopic ellipsometry and reflectometry.  The FilmTek™ 2000SE spectroscopic ellipsometer utilizes SCI's material modeling software to provide an affordable and reliable tool for the simultaneous measurement of film thickness, index of refraction, and extinction coefficient.

	Spectroscopic reflection (190nm-1700nm) of polarized light at multiple angles
	Spectroscopic ellipsometry with rotating compensator design (300nm-1700nm)
	Measures film thickness and index of refraction independently
	New Multi-Angle Differential Polarimetry (MADP) technology with SCI’s patented Differential Power Spectral Density (DPSD) technology

Ideal for measuring ultra-thin films (0.03 Å repeatability on native oxide)

Ideal for measuring advanced thin films

FilmTek™ 2000SE Features

	Versatile: FilmTek™ 2000SE incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of: - Multiple layer thicknesses - Indices of refraction [ n(l ) ] - Extinction (absorption) coefficients [ k(l ) ] - Energy band gap [ Eg ]         - Constituent and void fraction - Film gradient
	Low Cost: The cost of ownership of FilmTek™ 2000SE is very competitive with comparable instruments.
	No Special Knowledge Required: FilmTek™ 2000SE software is designed so that minimal experience in personal computers, thin film optical design, or measurement techniques is required.
	Complete "turn key" System: A fully integrated measurement system with calibration, acquisition, and analysis software.
	Non-contact and non-destructive.
	Flexible: FilmTek™ hardware and software can be easily modified to satisfy unique customer requirements.
	Optional features: - Computer controlled automated stage. - Cassette to cassette wafer handling

Applications

Virtually all translucent films ranging in thickness from 1 angstrom to approximately 150 microns can be measured with high precision. Typical applications include:

	Semiconductor and dielectric materials			Computer disks
	Multilayer optical coatings			Coated glass
	Optical antireflection coatings			Laser mirrors
	Electro-optical materials			Thin Metals

Example Films
	SiOx			a-Si
	SiNx			a-C:H
	DLC			ITO
	SOG			Polysilicon
	Photoresist			Polyimide
	Thin Metals			Low K Dielectric Films

Example Substrates
	Silicon			GaAs
	SOI			Glass
	SOS			Aluminum

Technical Specifications

FilmTek™ 2000SE Performance Specifications

Film(s)	Thickness	Measured Parameters	Precision (1σ)
Oxide / Si	0-1000 Å	t	0.03 Å
	1000-500,000 Å	t	0.005%
	1000 Å	t, n	0.2 Å / 0.0001
	15,000 Å	t, n	0.5 Å / 0.0001
	150,000 Å	t, n	1.5 Å / 0.00001
Photoresist / Si	1000-5000 Å	t	0.02%
	1000-5000 Å	t, n	0.05% / 0.0002
Nitride / Si	1000-5000 Å	t	0.02%
	1000-5000 Å	t, n	0.05% / 0.0005
Polysilicon / Oxide / Si	850 Å / 55 Å	t Poly , t Oxide	0.2 Å / 0.1 Å
	850 Å / 55 Å	t Poly , t Oxide	0.2 Å / 0.0005

 

Hardware

FilmTek™ 2000SE is a complete system, which includes:

 

	UV/VIS/NIR spectrophotometer
	UV/VIS/NIR light source
	Fiber optic cables
	Autofocus
	Manual sample stage with optics.  X-Y stage for 100mm, 150mm and 200mm wafers is standard.
	Multi-core processor with Windows™ XP Operating System

Methodology

The FilmTek™ 2000SE spectroscopic ellipsometer simultaneously solves for refractive index n(l), extinction coefficient k(l), and thicknesses of multi-layer film structures.  A self-consistent solution is obtained by using SCI’s generalized dispersion formula to model fitted values of the dielectric function e (l).  The SCI dispersion formula is quite general and applies to metallic, amorphous, crystalline, and dielectric materials (Figures 1-3).  This approach allows the user to model complex multi-layer structures with reflection/transmission or ellipsometric data.  Global optimization methods are used to obtain the best solution while avoiding local minima and minimizing sensitivity to the user’s initial guess of fitted parameters (e.g., layer thickness).  The FilmTek™ 2000SE spectroscopic ellipsometer optimizes both the ellipsometric data and power density spectrum (FFT) simultaneously which allows for accurate thickness determination over a wide range of thickness (1Å to 10mm).

 

 

Fig. 1 n and k spectra of Silicon

Fig. 2 n and k spectra of SiO2

Fig. 3 n and k spectra of Tantalum

 

 

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