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FilmTek™ 2000, FilmTek™ 2000M, and FilmTek™ 2000 PAR

FilmTek™ 2000 is a breakthrough in thin film metrology technology.  FilmTek™ 2000 combines a fiber-optic spectrophotometer with revolutionary material modeling software to provide an affordable and reliable tool for the simultaneous measurement of film thickness, index of refraction, and extinction coefficient.  FilmTek™ 2000 provides unmatched accuracy, ease of use, and analytical power in a fully integrated package.  Ideally suited for patterned device wafers, the FilmTek™ 2000M allows for measurement spot sizes as small as 5mm.  The FilmTek™ 2000 PAR utilizes SCI's patented parabolic mirror technology developed for the FilmTek™ 4000EM-DUV to achieve a 50mm measurement spot size and simultaneously measure wavelengths from the deep ultra-violet to the near infrared. 

FilmTek™ 2000 Features

	Versatile: FilmTek™ 2000 incorporates SCI’s generalized material model with advanced global optimization algorithms for simultaneous determination of: - Multiple layer thicknesses - Indices of refraction [ n(l ) ] - Extinction (absorption) coefficients [ k(l ) ] - Energy band gap [ Eg ]         - Constituent and void fraction - Surface roughness
	Low Cost: The cost of ownership of FilmTek™ 2000 is a small fraction of comparable instruments.
	No Special Knowledge Required: FilmTek™ 2000 software is designed so that minimal experience in personal computers, thin film optical design, or measurement techniques is required.
	Complete "turn key" System: A fully integrated spectrophotometer measurement system with calibration, acquisition, and analysis software.
	Non-contact and non-destructive.
	Flexible: FilmTek™ 2000 hardware and software can be easily modified to satisfy unique customer requirements.
	Optional features:   - Computer controlled automated stage - Microscope based system for spot sizes as small as 5mm - Cassette to cassette wafer handling

Applications

Virtually all translucent films ranging in thickness from less than 100 angstroms to approximately 150 microns can be measured with high precision. Typical applications include:

	Semiconductor and dielectric materials			Computer disks
	Multilayer optical coatings			Coated glass
	Optical antireflection coatings			Laser mirrors
	Electro-optical materials			Thin Metals

Example Films
	SiOx			a-Si
	SiNx			a-C:H
	DLC			ITO
	SOG			Polysilicon
	Photoresist			Polyimide
	Thin Metals			Low K Dielectric Films

Example Substrates
	Silicon			GaAs
	SOI			Glass
	SOS			Aluminum

Technical Specifications

Hardware

FilmTek™ 2000 is a complete system, which includes:

	UV/VIS/NIR spectrophotometer
	UV/VIS/NIR light source
	Fiber optic cables
	Manual sample stage with optics.  X-Y stage for 100mm, 150mm and 200mm wafers is standard.
	Multi-core processor with Windows™ XP Operating System

Methodology

FilmTek™ 2000 simultaneously solves for refractive index n(l), extinction coefficient k(l), and thicknesses of multi-layer film structures.  A self-consistent solution is obtained by using SCI’s generalized dispersion formula to model fitted values of the dielectric function e (l).  The SCI dispersion formula is quite general and applies to metallic, amorphous, crystalline, and dielectric materials (Figures 1-3).  This approach allows the user to model complex multi-layer structures with reflection/transmission data.  Global optimization methods are used to obtain the best solution while avoiding local minima and minimizing sensitivity to the user’s initial guess of fitted parameters (e.g., layer thickness).  FilmTek™ 2000 optimizes both the reflectance and power density spectrum (FFT) simultaneously.  This unique feature allows for accurate thickness determination over a wide range of thickness (3nm to 350mm).

Fig. 1 n and k spectra of Silicon

Fig. 2 n and k spectra of SiO2

Fig. 3 n and k spectra of Tantalum

 

 

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